FDC8602 is a dual N-Channel PowerTrench MOSFET produced by Fairchild Semiconductor. It has extremely low RDS(on), high power and current handling capability, and is suitable for load switching and synchronous rectification applications.
This document is a technical datasheet for the Fairchild Semiconductor FDC8602, which features dual N-channel PowerTrench MOSFETs with a drain-to-source voltage rating of 100V and continuous current handling up to 1.2A. The device utilizes advanced trench technology optimized for switching performance and ruggedness.
| Drain to Source Voltage (VDS) | 100 V |
|---|---|
| Continuous Drain Current (ID) | 1.2 A |
| Pulsed Drain Current | 5 A |
| Power Dissipation (Ta=25°C) | 0.96 W |
| Operating Junction Temperature Range | -55 to +150 °C |
| Package Type | SuperSOT-6 |
The device is suitable for use in load switches and synchronous rectifiers.
Yes, the document states that the product is RoHS Compliant.