This document describes the features and characteristics of the FDD18N20LZ N-Channel MOSFET, including maximum rated voltage, maximum drain current, and thermal characteristics.
This document is a technical datasheet for the Fairchild Semiconductor FDD18N20LZ, an N-channel enhancement mode power field effect transistor. The device utilizes proprietary planar stripe DMOS technology designed to minimize on-state resistance and provide superior switching performance for high-efficiency applications such as switch-mode power supplies.
| Continuous Drain Current (Tj = 25°C) | 16 A |
|---|---|
| Pulsed Drain Current | 64 A |
| Package Type | D-PAK |
The device is rated for an operating and storage temperature range from -55 to +150 °C.