FDP120AN15A0 / FDD120AN15A0 N-Channel PowerTrench® MOSFET 150V, 14A, 120mΩ is a low leakage current, low on-resistance, high voltage, high temperature N-channel MOSFET produced by Fairchild Semiconductor Corporation. It is suitable for DC/DC Converters and Off-line UPS, Distributed Power Architectures and VRMs, Primary Switch for 24V and 48V Systems, High Voltage Synchronous Rectifier, Direct Injection / Diesel Injection Systems, Electronic Valve Train Systems and other applications.
This document provides technical specifications for the Fairchild FDP120AN15A0 and FDD120AN15A0 N-Channel PowerTrench MOSFETs. Key features include a drain-to-source voltage rating of 150V, a continuous drain current of 14A, and a typical on-resistance of 120mΩ. The devices are designed for applications such as DC/DC converters, off-line UPS, distributed power architectures, VRMs, and synchronous rectifiers.
| Drain to Source Voltage | 150 V |
|---|---|
| Gate to Source Voltage | 420 V |
| Continuous Drain Current (Tj = 25°C) | 14 A |
| Continuous Drain Current (Tj = 100°C) | 9.7 A |
| On Resistance (Typical) | 120 mΩ |
| Total Gate Charge | 11.2 nC |
| Power Dissipation | 65 W |
| Operating Temperature Range | -55 to 175 °C |
| Thermal Resistance (Junction to Case) | 2.31 °C/W |
The maximum rated junction temperature (Tj) is 175°C.
The typical on-resistance (Rds(on)) is 120mΩ at Vgs = 10V and Id = 4A.