Fairchild Semiconductor FDC8884 N-Channel Power Trench MOSFET Datasheet

This document describes the features and characteristics of the FDC8884 N-Channel Power Trench® MOSFET, including maximum on-resistance, fast switching speed, etc.

Brand: Fairchild
Category: Other Electronics
Document type: Datasheet
Language: English
Pages: 7
File format: PDF
File size: 262 KB
Published: 11 July, 2012
Updated: 29 September, 2023
MD5 checksum: 79DDEE4B45C83E4A23A838F7A2917E14
PDF: Fairchild Semiconductor FDC8884 N-Channel Power Trench MOSFET Datasheet PDF

About this manual

This document is a datasheet for the Fairchild Semiconductor FDC8884 N-Channel Power Trench MOSFET. The device utilizes advanced Power Trench technology optimized for low on-resistance and fast switching speed. It is RoHS compliant and available in a SuperSOT-6 package.

What's inside

Features
General Description
Maximum Ratings
Electrical Characteristics
Thermal Characteristics
Typical Characteristics
Package Marking and Ordering Information
Dimensional Outline and Pad Layout

Specifications

Package Type	SuperSOT-6

Frequently asked questions

What is the maximum continuous drain current for this MOSFET at 25°C?

The maximum continuous drain current is 6.5 A when the temperature is 25°C.

What is the maximum power dissipation when the device is mounted on a 202 copper pad?

The maximum power dissipation is 1.6 W when mounted on a 202 copper pad.

What is the maximum operating and storage junction temperature range?

The operating and storage junction temperature range is from -55 to +150°C.

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