The FDC86244 N-Channel Power Trench® MOSFET is a high performance power MOSFET with extremely low rDS(on) and fast switching speed, which is suitable for load switch, synchronous rectifier and primary switch applications.
The FDC86244 is an N-Channel Power Trench MOSFET produced using Fairchild Semiconductors advanced Power Trench process. It is optimized for ruggedness and features high performance trench technology for extremely low on-resistance. The device is available in a widely used surface mount SuperSOT-6 package.
| Drain to Source Voltage | 150 V |
|---|---|
| Package Type | SuperSOT-6 |
The device supports a maximum continuous drain current of 2.3 A.
The maximum power dissipation is 1.6 W when mounted on a 1 in² pad of 2 oz copper.
The device operates and stores within a junction temperature range of -55 to +150 °C.