Key facts
- Brand
- Vishay
- Model
- SI4830ADY
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-08-01
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Vishay Siliconix Si4830ADY Dual N-Channel MOSFET Datasheet
Datasheet 6 pages · 68 KB · EN
The document describes the Vishay Siliconix Si4830ADY, which is a Dual N-Channel 30-V (D-S) MOSFET with a built-in Schottky diode. It features a Little Foot Plus package and is pin-compatible with the Si4830DY.
Read onlineVishay SI4830ADY specifications
| Drain-Source Voltage | 30 V |
|---|---|
| Gate Threshold Voltage (Typ) | 1.5 V |
| On-State Drain Current | 75 A |
| Drain-Source On-State Resistance (Typ) | 0.022 Ohm |
| Diode Forward Voltage (Typ) | 0.50 V |
| Operating Junction Temperature Range | -55 to 150 °C |
Source: Vishay Siliconix Si4830ADY Dual N-Channel MOSFET Datasheet
All Vishay SI4830ADY documents by type
Datasheet 2
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum drain-source voltage rating for this MOSFET?
The device has a maximum drain-source voltage of 30 V.
From: Vishay Siliconix Si4830ADY Dual N-Channel MOSFET Datasheet
How much continuous current can flow through the diode at room temperature?
The continuous source current for diode conduction is 17 A when Ta = 25°C.
From: Vishay Siliconix Si4830ADY Dual N-Channel MOSFET Datasheet
What is the maximum drain-source voltage rating for the Si4830ADY?
The device has a maximum drain-source voltage rating of 30 V.
From: Vishay Siliconix Si4830ADY Dual N-Channel MOSFET Datasheet