Key facts
- Brand
- Vishay
- Model
- TEKT5400S
- Industry
- Industrial
- Documents
- 2
- Languages
- ZH · EN
- Last added
- 2012-05-09
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Vishay TEKT5400S Phototransistor Datasheet
The TEKT5400S is a high‑sensitivity silicon NPN epitaxial planar phototransistor in a flat side‑view plastic package. It features a recessed lens, built‑in IR filter matched to emitters >850 nm, and an angle of half sensitivity of –37°.
The datasheet lists absolute maximum ratings such as VCEO 70 V, IC 100 mA, peak collector current 200 mA, total power dissipation 150 mW, and junction temperature 100 °C. Typical characteristics include wavelength of peak sensitivity 920 nm, turn‑on time 6 µs, turn‑off time 5 µs, and dimensions in millimetres. The device is intended for detector applications in electronic control and drive circuits. This manual is written in Chinese.
Vishay TEKT5400S specifications
| Collector‑Emitter Voltage (VCEO) | 70 V |
|---|---|
| Collector Current (IC) | 100 mA |
| Peak Collector Current | 200 mA |
| Junction Temperature (Tj) | 100 °C |
| Wavelength of Peak Sensitivity (λp) | 920 nm |
| Angle of Half Sensitivity (ϕ) | –37° |
All Vishay TEKT5400S documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum collector current?
The maximum collector current is 100 mA.
What is the peak collector current rating?
The peak collector current rating is 200 mA.
What is the maximum collector‑emitter voltage for the TEKT5400S?
The device can withstand up to 70 V between collector and emitter.
From: Vishay TEKT5400S Silicon NPN Phototransistor Datasheet
At what wavelength does the TEKT5400S have peak sensitivity?
Peak sensitivity occurs at approximately 920 nm.
From: Vishay TEKT5400S Silicon NPN Phototransistor Datasheet