STP7NB40 is a N-channel enhancement mode power MOSFET produced by Philips company, it has the lowest RDS(on) of 0.75 ohms, extremely high dv/dt capability, 100% avalanche tested, very low intrinsic capacitances, minimized gate charge. The product is mainly used in high current, high speed switching, switch mode power supplies (SMPS), inverters and other fields
The STP7NB40 and STP7NB40FP are high‑voltage N‑channel PowerMESH MOSFETs offered in TO‑220 and TO‑220FP packages. They feature a low typical on‑resistance, high avalanche capability and minimized gate charge, making them suitable for high‑current, high‑speed switching applications such as SMPS and motor drives.
The document provides comprehensive specifications including absolute maximum ratings, thermal data, avalanche characteristics, electrical parameters, switching times, and source‑drain diode behavior. All data are preliminary and subject to change without notice.
| Drain‑source Voltage (Vds) | 400 V |
|---|---|
| Typical On‑Resistance (Rds(on)) | 0.75 |
| Avalanche Current (Ia) | 7 A |
The maximum drain‑source voltage is 400 V.
The typical on‑resistance is 0.75 (unit as specified in the datasheet).
The avalanche current rating is 7 A.