STP7NA60 is an N-channel enhancement mode fast power MOS transistor with low on-resistance and gate charge, superior reliability, and switching performance.
The SGS‑Thomson STP7NA60 series are high‑voltage, fast‑switching power MOSFETs offered in TO‑220 and ISOWATT220 packages. The document provides detailed electrical ratings such as a 600 V drain‑source voltage, typical on‑resistance of 0.92 mΩ, and continuous drain currents of 7.2 A (STP7NA60) or 4.4 A (STP7NA60FI) at 25 °C.
Thermal performance data, avalanche characteristics, switching times, and mechanical dimensions for both package types are also listed, along with safety and usage notes. The datasheet is intended for designers of high‑current, high‑speed switching applications such as SMPS, welding converters, and motor drives.
| Drain‑Source Voltage (VDS) | 600 V |
|---|---|
| Gate‑Source Voltage (VGS) Rating | +30 V |
| Continuous Drain Current (25 °C) | 7.2 A (STP7NA60) / 4.4 A (STP7NA60FI) |
| Typical On‑Resistance (RDS(on)) | 0.92 mΩ |
| Total Power Dissipation (25 °C) | 125 W (STP7NA60) / 45 W (STP7NA60FI) |
| Junction‑to‑Case Thermal Resistance (TO‑220) | 2.78 °C/W |
| Junction‑to‑Ambient Thermal Resistance (TO‑220) | 62.5 °C/W |
| Avalanche Current (non‑repetitive) | 7.2 A |
The device is rated for a maximum drain‑source voltage of 600 V.
The typical on‑resistance is 0.92 mΩ.
It can conduct 7.2 A continuously at 25 °C (4.4 A for the FI version).