STP7NA60 is a high voltage power MOSFET produced by Dinghao Technology. Its features are low on-resistance, high switching speed, and is suitable for high current and high frequency switching applications.
The STP7NA60 and STP7NA60FI are 600 V, fast‑power MOSFETs designed for high‑current, high‑speed switching applications such as SMPS, welding converters, UPS and motor drives. They feature low on‑resistance, minimized gate charge, and avalanche‑rated capability.
The document provides absolute maximum ratings, thermal characteristics, avalanche data, electrical parameters, switching times, and mechanical dimensions for both TO‑220 and ISOWATT220 packages, enabling designers to assess suitability for their circuits.
| Drain‑source Voltage (Vds) | 600 V |
|---|---|
| Gate‑source Voltage (Vgs) rating | +30 V |
| Avalanche Current (Ia) | 7.2 A (repetitive) |
| On‑Resistance (RDS(on)) typical | 0.92 Ω |
The device is rated for a maximum drain‑source voltage of 600 V.
The typical static drain‑source on‑resistance is 0.92 Ω.
The device can handle a repetitive avalanche current of up to 7.2 A.