2SK2624LS is a N-channel silicon MOSFET from SANYO with low on-resistance and low Qg characteristics
The SANYO 2SK2624LS is an N‑channel silicon MOSFET designed for ultrahigh‑speed switching applications. It is supplied in a TO‑220FI‑LS package and is intended for use in circuits requiring low on‑resistance and fast transition times.
Key specifications include a 600 V drain‑to‑source rating, 3 A continuous drain current, and typical on‑resistance of about 2 mΩ. The document also provides detailed gate charge, capacitance, and switching time data, together with safety and export‑control notices for designers.
| Drain-to-Source Voltage (VDS) | 600 V |
|---|---|
| Gate-to-Source Voltage (VGS) | +30 V |
| Continuous Drain Current (ID) at 25 °C | 3 A |
| Pulse Drain Current (ID) (10 µs) | 12 A |
| Total Gate Charge (Qg) | 15 nC |
| Diode Forward Voltage | 0.98‑1.2 V |
The device is rated for a maximum drain‑to‑source voltage of 600 V.
It can be stored from –55 °C up to +150 °C.
Yes, the product may not be exported without an appropriate export license.