The 2SK2624ALS is a general‑purpose N‑channel silicon MOSFET from SANYO Semiconductor designed for low ON‑resistance, low gate charge and ultrahigh‑speed switching. It is intended for standard electronic equipment such as home appliances, AV gear, communication devices and industrial equipment.
Key specifications include a 600 V drain‑to‑source breakdown voltage, +30 V gate‑to‑source rating, 3.5 A continuous drain current, 12 A pulsed current, typical on‑state resistance of about 2 mΩ, and capacitances of 550 pF (Ciss) and 165 pF (Coss). The device is supplied in a TO‑220F package and includes safety notes for handling.
| Drain-to-Source Voltage (V_DSS) | 600 V |
|---|---|
| Gate-to-Source Voltage (V_GSS) | +30 V |
| Continuous Drain Current (I_D) | 3.5 A |
| Pulsed Drain Current (I_DP) | 12 A |
| Input Capacitance (Ciss) | 550 pF |
| Output Capacitance (Coss) | 165 pF |
| Total Gate Charge (Qg) | 15 nC |
| Maximum Power Dissipation at 25 °C | 25 W |
The device can withstand up to 600 V drain‑to‑source voltage.
Avoid using the MOSFET in the vicinity of highly charged objects.
The continuous drain current rating is 3.5 A.