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The 2SK2623 is a N‑channel silicon MOSFET intended for ultrahigh‑speed switching applications. It offers a low ON‑resistance and fast switching times, making it suitable for high‑frequency power conversion circuits.
The datasheet provides absolute maximum ratings, typical electrical characteristics, package dimensions, and a switching‑time test circuit. It also includes safety and export‑control notices for designers.
| Drain-to-Source Voltage (VDS) | 600 V |
|---|---|
| Gate-to-Source Voltage (VGS) | 30 V |
| Continuous Drain Current (Id) | 15 A |
| Pulse Drain Current (Idp) | 6 A |
| Power Dissipation (Pd) | 30 W |
| Static On‑Resistance (RDS(on)) | 5.5 mΩ (typ) |
| Input Capacitance (Ciss) | 300 pF |
| Output Capacitance (Coss) | 90 pF |
| Reverse Transfer Capacitance (Crss) | 45 pF |
| Total Gate Charge (Qg) | 8 nC |
The device can withstand up to 600 V drain‑to‑source voltage.
Typical RDS(on) is 5.5 mΩ when VGS is 15 V and Id is 0.8 A.
It is rated for a continuous drain current of 15 A.
The input capacitance is specified as 300 pF at 1 MHz.