Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
The NXP BUK9880-55 is a logic level N-channel enhancement mode Field-Effect Transistor (FET) utilizing TrenchMOS technology. It is packaged in a plastic SC-73 (SOT223) form factor and is designed and qualified to the appropriate AEC standard for use in automotive critical applications.
Key features include AEC Q101 compliance, electrostatic robustness due to integrated protection diodes, and low conduction losses resulting from a low on-state resistance. The device is suitable for automotive and general-purpose power switching applications.
| Package type | SC-73 plastic surface-mounted package |
|---|---|
| Junction temperature | -55 to 150 °C |
Yes, the product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
The maximum drain current is 75 A at 25 °C.