400 W LDMOS power transistor for base station applications at frequencies from 716 MHz to 960 MHz.
This document is a product data sheet for the NXP BLF8G09LS-400PW and BLF8G09LS-400PGW Power LDMOS transistors. These devices are designed for base station applications operating in the frequency range from 716 MHz to 960 MHz, delivering 400 W of power. Key features include excellent ruggedness, high efficiency, and low thermal resistance, making them suitable for broadband operation and Doherty applications.
| Power | 400 W |
|---|---|
| Frequency range | 716 MHz to 960 MHz |
| Drain-source voltage | 65 V |
| Gate-source voltage | -0.5 to +13 V |
| Junction temperature | 225 °C |
| Power gain | 20.6 dB |
| Drain efficiency | 30 % |
| Adjacent channel power ratio | -35 dBc |
The transistor is designed for base station applications at frequencies from 716 MHz to 960 MHz.
The maximum junction temperature is 225 °C.
The typical power gain is 20.6 dB when the output power is 95 W.