400 W LDMOS power transistor for base station applications at frequencies from 716 MHz to 960 MHz.
The document details the BLF8G09LS-400P(G)W Power LDMOS transistor designed for RF power amplifiers in base stations and multi-carrier applications within the 716 MHz to 960 MHz frequency range. Key features include excellent ruggedness, high efficiency, low thermal resistance, and internal matching for ease of use.
| Frequency range | 716 MHz to 960 MHz |
|---|---|
| Power rating | 400 W |
It is designed for RF power amplifiers in base stations and multi-carrier applications.
Yes, the design is compliant to Directive 2002/95/EC regarding Restriction of Hazardous Substances.
The device shows a typical video bandwidth of 45 MHz in class-AB operation.