The document describes the features of the 1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O, which combines state-of-the-art Intel Flash technology with low power SRAM. It offers a multi-partition, dual-operation flash architecture that allows reading from one partition while programming or erasing in another partition. This Read-While-Write or Read-While-Erase capability enables higher data throughput rates compared to single partition devices and allows interleaving code execution. The memory also includes Enhanced Factory Programming (EFP) mode to improve programming performance and eliminate manufacturing bottlenecks. It also features block lock-down and programmable WAIT signal.
This document is a preliminary datasheet for the 1.8 Volt Intel® Wireless Flash Memory with 3 Volt I/O and SRAM (W30). It covers four specific models: 28F6408W30, 28F3204W30, 28F320W30, and 28F640W30. The device combines state-of-the-art Flash technology with low power SRAM to provide a versatile memory solution for high performance, low power applications.
The datasheet details the product features, including multiple 4-Mbit partitions, dual operation modes (Read-While-Write or Read-While-Erase), and enhanced factory programming capabilities. It provides comprehensive information on package diagrams, signal descriptions, block diagrams, flash memory maps, bus operations, command definitions, read/write modes, security features, protection registers, power considerations, and electrical specifications.
| Initial Access Speed | 70 ns |
|---|---|
| Page-Mode Read Speed | 25 ns |
| Burst-Mode Read Speed | 20 ns |
| Program Time per Word | 3.5 us |
| Standby Current (typ.) | 6 pA |
| Read Current | 7 mA |
| Operating Temperature Range | -25 °C to +85 °C |
| Minimum Erase Cycles | 100K |
The enhanced factory programming mode offers a program time of 3.5 us per word.
The typical standby current for this device is 6 pA.