BB601M is a HITACHI BBFET type MOS FET IC UHF RF Amplifier with built-in bias circuit, high gain, low noise and ESD protection
The BB601M MOS FET IC from Hitachi features a built‑in biasing circuit that reduces component count and board space. It delivers a typical power gain of 21.5 dB and a noise figure of 1.85 dB at 900 MHz, and includes an ESD‑absorbing diode rated for up to 200 V.
The datasheet provides absolute maximum ratings, detailed electrical characteristics, test and application circuits, and package dimensions (MPAK‑4R SOT‑143mod). Cautionary notes address warranty, IP rights, and proper usage limits for reliable operation.
| Power Gain (typical) | 21.5 dB at 900 MHz |
|---|---|
| Noise Figure (typical) | 1.85 dB at 900 MHz |
| Drain‑to‑Source Voltage (max) | 6 V |
| Gate‑to‑Source Breakdown Voltage | +6 V |
| Drain Current (max) | 20 mA |
| Channel Power Dissipation | 150 mW |
| Package Type | MPAK‑4R (SOT‑143mod) |
The typical power gain is 21.5 dB at 900 MHz.
The typical noise figure is 1.85 dB at 900 MHz.
The maximum drain current is 20 mA.
It is supplied in an MPAK‑4R (SOT‑143mod) package.