BB601M is a MOS FET IC UHF RF Amplifier from HITACHI. It features high gain, low noise, built-in ESD absorbing diode, and mini mold packages.
The BB601M is a MOS FET integrated circuit with a built‑in biasing circuit designed for UHF RF amplification. It offers high gain, low noise, and ESD protection, and is supplied in a mini‑mold MPAK‑4R package.
The document lists absolute maximum ratings, electrical characteristics, and typical performance graphs such as power gain versus gate resistance and noise figure versus gate resistance. Package dimensions and cautions for proper use are also included.
| Drain to source voltage (VDS) max | 6 V |
|---|---|
| Gate to source cutoff voltage (VGS(off)) typical | 0.5 V |
| Drain current (ID) max | 20 mA |
| Channel power dissipation (Pch) max | 150 mW |
| Power gain (PG) typical at 900 MHz | 21.5 dB |
| Noise figure (NF) typical at 900 MHz | 1.85 dB |
The maximum drain current is 20 mA.
The typical power gain is 21.5 dB at 900 MHz.
The typical noise figure is 1.85 dB at 900 MHz.
It is supplied in a mini‑mold MPAK‑4R (SOT‑143mod) package.