Key facts
- Brand
- Freescale
- Model
- MRF1517NT1
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-05-03
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Freescale MRF1517NT1 RF Power MOSFET Datasheet
The MRF1517NT1 is a lateral N‑channel enhancement‑mode MOSFET designed for broadband commercial and industrial RF applications up to 520 MHz. It delivers high gain and power output, making it suitable for large‑signal common‑source amplifiers in portable FM equipment.
The datasheet provides maximum ratings, thermal characteristics, moisture‑sensitivity levels, detailed electrical parameters, and typical performance curves such as output power versus input power, gain, and drain efficiency across several frequency bands.
Freescale MRF1517NT1 specifications
| Output Power | 8 W |
|---|---|
| Power Gain | 11 dB |
| Efficiency | 55 % |
| Drain‑Source Voltage (Voss) | -0.5 V to +25 V |
| Gate‑Source Voltage (Vgs) | +20 V |
| Continuous Drain Current | 4 A |
| Thermal Resistance, Junction‑to‑Case (RθJC) | 2 °C/W |
| Storage Temperature Range | -65 °C to +150 °C |
| Operating Junction Temperature | 150 °C |
All Freescale MRF1517NT1 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum output power of the MRF1517NT1?
The device can deliver up to 8 W of output power at 520 MHz with a 7.5 V supply.
How should the MOSFET be handled to avoid damage?
MOS devices are susceptible to electrostatic discharge, so reasonable ESD precautions should be taken during handling.
What is the maximum drain‑source voltage for the MRF1517NT1?
The device can tolerate a drain‑source voltage of –0.5 V to +25 Vdc.
How much output power can the MRF1517NT1 deliver at 520 MHz?
It can deliver up to 8 W of output power when operated at 7.5 V.