Key facts
- Brand
- Freescale
- Model
- MRF1513NT1
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-05-04
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Freescale MRF1513NT1 RF Power MOSFET Datasheet
The MRF1513NT1 is a broadband N‑channel enhancement‑mode lateral MOSFET designed for commercial and industrial RF applications up to 520 MHz. It delivers up to 3 W output power at 12.5 V with 11 dB gain and 55 % drain efficiency, and can handle a 20:1 VSWR.
Typical uses include large‑signal common‑source amplifiers in portable 7.5 V and mobile 12.5 V FM equipment. The device is supplied in a lead‑free, RoHS‑compliant PLD‑1.5 plastic package, available in tape‑and‑reel form for automated assembly.
Freescale MRF1513NT1 specifications
| Maximum Frequency | 520 MHz |
|---|---|
| Output Power | 3 W |
| Power Gain | 11 dB |
| Drain Efficiency | 55 % |
| Drain‑Source Voltage (VDSS) | -0.5 V to +40 V |
| Gate‑Source Voltage (VGS) | ±20 V |
| Thermal Resistance (RθJC) | 4 °C/W |
All Freescale MRF1513NT1 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum output power of the MRF1513NT1?
The device can deliver up to 3 W of output power at 520 MHz and 12.5 V.
What drain efficiency does the MRF1513NT1 provide?
It achieves a drain efficiency of about 55 %.
What is the maximum output power of the MRF1513NT1?
The device can deliver up to 3 W of output power at 520 MHz with a 12.5 V supply.
What gate‑source voltage range is allowed?
The gate‑source voltage may be set between –20 V and +20 Vdc.