The MRF1517NT1 is an N‑channel enhancement‑mode lateral MOSFET designed for broadband commercial and industrial RF applications up to 520 MHz. It delivers up to 8 W output power at 7.5 V with 14 dB gain and 70 % efficiency, making it suitable for large‑signal common‑source amplifiers in portable FM equipment.
The datasheet provides maximum ratings, thermal characteristics, electrical parameters, typical performance curves, mounting guidelines, package dimensions, and references to application notes and software tools. All specifications are given for the PLD‑1.5 surface‑mount package (style 466‑03) and include RoHS‑compliant, lead‑free options.
| Drain‑Source Voltage (VDSS) | -0.5, +25 Vdc |
|---|---|
| Gate‑Source Voltage (VGS) | ±20 Vdc |
| Continuous Drain Current (ID) | 4 A |
| Thermal Resistance (RθJC) | 2 °C/W |
| Maximum Output Power | 8 W at 520 MHz, 7.5 V |
| Power Gain | 14 dB |
| Drain Efficiency | 70 % |
| Package Style | 466‑03 (PLD‑1.5 plastic) |
The device can tolerate a drain‑source voltage of –0.5 V to +25 Vdc.
It can deliver up to 8 W of output power when operated at 7.5 V.
Typical power gain is 14 dB and drain efficiency is 70 %.
The thermal resistance (RθJC) is specified as 2 °C/W.