MRF1517NT1 is a RF power field effect transistor produced by Freescale Semiconductor. N-channel enhancement-mode lateral MOSFET is designed for broadband commercial and industrial applications at frequencies up to 520 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common source amplifier applications in 7.5 volt portable FM equipment.
The MRF1517NT1 is a lateral N‑channel enhancement‑mode MOSFET designed for broadband commercial and industrial RF applications up to 520 MHz. It delivers high gain and power output, making it suitable for large‑signal common‑source amplifiers in portable FM equipment.
The datasheet provides maximum ratings, thermal characteristics, moisture‑sensitivity levels, detailed electrical parameters, and typical performance curves such as output power versus input power, gain, and drain efficiency across several frequency bands.
| Output Power | 8 W |
|---|---|
| Power Gain | 11 dB |
| Efficiency | 55 % |
| Drain‑Source Voltage (Voss) | -0.5 V to +25 V |
| Gate‑Source Voltage (Vgs) | +20 V |
| Continuous Drain Current | 4 A |
| Thermal Resistance, Junction‑to‑Case (RθJC) | 2 °C/W |
| Storage Temperature Range | -65 °C to +150 °C |
| Operating Junction Temperature | 150 °C |
The device can deliver up to 8 W of output power at 520 MHz with a 7.5 V supply.
MOS devices are susceptible to electrostatic discharge, so reasonable ESD precautions should be taken during handling.
The part is available in tape and reel, Style 1, with 1,000 units per 12 mm reel.