Key facts
- Brand
- Freescale
- Model
- MRF1511NT1
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-05-02
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Freescale MRF1511NT1 RF Power MOSFET Data Sheet
The MRF1511NT1 is a lateral N‑channel enhancement‑mode MOSFET designed for broadband commercial and industrial RF applications up to 175 MHz. It offers high gain, wide bandwidth, and can handle 20:1 VSWR, making it suitable for portable FM power amplifiers and other VHF/UHF designs.
The device is supplied in a PLD‑1.5 surface‑mount package (tape and reel) with a thermal resistance of 2 °C/W. Typical specifications include a drain‑source voltage rating of –0.5 V to +40 V, gate‑source rating of ±20 V, and a continuous drain current of 4 A. Detailed electrical, thermal, and mechanical data are provided for design and mounting considerations.
Freescale MRF1511NT1 specifications
| Drain‑Source Voltage (VDSS) | -0.5 to +40 Vdc |
|---|---|
| Gate‑Source Voltage (VGS) | ±20 Vdc |
| Continuous Drain Current (ID) | 4 A |
| Output Power (at 175 MHz, 7.5 V) | 8 W |
| Power Gain | 11.5 dB |
| Drain Efficiency | 55 % |
| Thermal Resistance (RθJC) | 2 °C/W |
| Package Dimensions | 0.115 in × 2.92 in |
All Freescale MRF1511NT1 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum drain‑source voltage rating?
The device is rated for a drain‑source voltage from –0.5 V to +40 Vdc.
How much output power can the MRF1511NT1 deliver at 175 MHz?
It can deliver up to 8 W of output power at 175 MHz with a 7.5 V supply.
What is the maximum output power of the MRF1511NT1?
The device can deliver up to 8 W of output power.
Up to what frequency can the MRF1511NT1 operate?
It is designed for broadband operation up to 175 MHz.