This document describes the features and characteristics of the MRF1513NT1 RF power field effect transistor. The transistor is designed for broadband commercial and industrial applications with frequencies up to 520 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common source amplifier applications in 7.5 volt portable and 12.5 volt mobile FM equipment. At 520 MHz and 12.5 volts, the transistor has an output power of 3 watts, power gain of 11 dB, and efficiency of 55%. It is capable of handling a 20:1 VSWR and has excellent thermal stability. The transistor is characterized with series equivalent large-signal impedance parameters. The N suffix indicates lead-free terminations and it is RoHS compliant. It is available in tape and reel packaging.