MRF1513NT1 is an RF power field effect transistor manufactured by Freescale Semiconductor. This device has high gain and broadband performance, ideal for large-signal, common source amplifier applications in 12.5 volt mobile FM equipment.
The MRF1513NT1 is an N‑channel lateral MOSFET designed for broadband RF power applications up to 520 MHz. It provides high gain and efficiency, making it suitable for large‑signal common‑source amplifiers in 7.5 V portable and 12.5 V mobile FM equipment.
The device features excellent thermal stability (RθJC = 4 °C/W) and can be supplied in tape‑and‑reel packaging (1,000 units per 12 mm, 7‑inch reel). Design notes cover impedance‑matching networks, stability techniques, and mounting guidelines for optimal heat‑sink contact.
| Drain‑Source Voltage (VDSS) | -0.5 V to +40 Vdc |
|---|---|
| Gate‑Source Voltage (VGS) | ±20 Vdc |
| Continuous Drain Current (ID) | 2 Adc |
| Maximum Junction Temperature (TJ) | 150 °C |
| Thermal Resistance, Junction‑to‑Case (RθJC) | 4 °C/W |
| Output Power (at 520 MHz, 12.5 V) | 3 W |
| Power Gain (at 520 MHz, 12.5 V) | 15 dB |
| Efficiency (at 520 MHz, 12.5 V) | 65 % |
| VSWR Handling | 20:1 |
| Packaging | Tape and Reel, 1,000 units per 12 mm, 7‑inch reel |
The device can deliver up to 3 W of output power at 520 MHz with a 12.5 V supply.
The gate‑source voltage may be set between –20 V and +20 Vdc.
The junction‑to‑case thermal resistance is 4 °C/W.
It is supplied in tape‑and‑reel format, 1,000 units per 12 mm, 7‑inch reel.