This datasheet provides the characteristics of MRF1511NT1 1 RF Device, including maximum ratings, storage temperature range, operating temperature range, moisture sensitivity level, etc.
The MRF1511NT1 is a broadband N‑channel enhancement‑mode lateral MOSFET designed for commercial and industrial RF applications up to 175 MHz. It offers high gain, good thermal stability, and RoHS‑compliant lead‑free packaging.
Typical performance graphs show output power, gain, and drain efficiency versus input power, bias current, and supply voltage. The document also provides maximum ratings, thermal characteristics, electrical parameters, and guidance on handling and reliability calculations.
| Output Power | 8 W |
|---|---|
| Power Gain | 13 dB |
| Efficiency | 70 % |
| Drain‑Source Voltage (VDS) | -0.5 to +40 V |
| Gate‑Source Voltage (VGS) | +20 V |
| Continuous Drain Current (ID) | 4 A |
| Thermal Resistance (Junction‑to‑Case) | 2 °C/W |
| Storage Temperature Range | -65 °C to +150 °C |
The device can deliver up to 8 W of output power.
It is designed for broadband operation up to 175 MHz.
MOS devices are susceptible to electrostatic discharge, so reasonable ESD precautions should be taken.