MRF1511NT1 is a RF Power Field Effect Transistor from Freescale Semiconductor. It is a N-Channel Enhancement-Mode Lateral MOSFET designed for broadband commercial and industrial applications at frequencies to 175 MHz. This device has high gain and broadband performance, making it ideal for large-signal, common source amplifier applications in 7.5 volt •portable FM equipment.
The MRF1511NT1 is a lateral N‑channel enhancement‑mode MOSFET designed for broadband commercial and industrial RF applications up to 175 MHz. It offers high gain, wide bandwidth, and can handle 20:1 VSWR, making it suitable for portable FM power amplifiers and other VHF/UHF designs.
The device is supplied in a PLD‑1.5 surface‑mount package (tape and reel) with a thermal resistance of 2 °C/W. Typical specifications include a drain‑source voltage rating of –0.5 V to +40 V, gate‑source rating of ±20 V, and a continuous drain current of 4 A. Detailed electrical, thermal, and mechanical data are provided for design and mounting considerations.
| Drain‑Source Voltage (VDSS) | -0.5 to +40 Vdc |
|---|---|
| Gate‑Source Voltage (VGS) | ±20 Vdc |
| Continuous Drain Current (ID) | 4 A |
| Output Power (at 175 MHz, 7.5 V) | 8 W |
| Power Gain | 11.5 dB |
| Drain Efficiency | 55 % |
| Thermal Resistance (RθJC) | 2 °C/W |
| Package Dimensions | 0.115 in × 2.92 in |
The device is rated for a drain‑source voltage from –0.5 V to +40 Vdc.
It can deliver up to 8 W of output power at 175 MHz with a 7.5 V supply.
The typical power gain is 11.5 dB.
A thermal resistance of 2 °C/W is specified for proper heat sinking.