The 1SS110 is a silicon epitaxial planar diode produced by HITACHI. It is suitable for 5mm pitch high speed automatic insertion and has low forward resistance and small glass package
This datasheet details the Hitachi 1SS110 silicon epitaxial planar diode, designed for tuner band switch applications. It highlights features such as low forward resistance and suitability for automated insertion. The document includes absolute maximum ratings, electrical characteristics, and package dimensions for the MHD glass package.
The diode is specified for use at 25°C with forward current up to 100 mA and reverse voltage up to 35 V. Capacitance and forward resistance are provided under test conditions, along with graphical representations of performance curves.
| Reverse Voltage | 35 V |
|---|---|
| Forward Current | 100 mA |
| Junction Temperature | 175 °C |
| Forward Voltage | 1.0 V |
| Reverse Current | 0.1 µA |
| Capacitance | 1.2 pF |
| Forward Resistance | 0.9 Ω |
| Weight | 0.084 g |
The maximum reverse voltage is 35 V.
The forward voltage is 1.0 V at 10 mA.
The forward resistance is 0.9 Ω at 2 mA and 100 MHz.