The 2SC1162 is a silicon NPN epitaxial transistor used for low frequency power amplification. It is complementary to 2SA715 and suitable for complementary pairs. It has a low noise figure and a high gain bandwidth product.
This document is a technical datasheet for the Hitachi 2SC1162, a Silicon NPN Epitaxial transistor designed as a low-frequency power amplifier complementary pair. The device features a TO-126 MOD package and is intended to be used with the 2SA715.
| Junction temperature | 150 °C |
|---|
The absolute maximum collector current is rated at 2.5 A.
The maximum continuous collector power dissipation is 0.75 W.
The transistor can operate with a maximum junction temperature of 150 °C.