This document describes the features of the 1SS119 silicon epitaxial planar diode, including low capacitance, short reverse recovery time, and small glass package. The diode is suitable for high-speed switching applications.
This datasheet provides technical specifications for the Hitachi 1SS119 silicon epitaxial planar diode, designed for high-speed switching applications. It includes absolute maximum ratings, electrical characteristics, and package dimensions. The diode features low capacitance (3.0pF max) and short reverse recovery time (3.5ns max). The small glass MHD package enables easy mounting and high reliability. The document also includes graphs for forward and reverse characteristics and cautions regarding usage and intellectual property.
| Reverse Recovery Time | 3.5 ns max |
|---|---|
| Capacitance | 3.0 pF max |
| Peak Reverse Voltage | 35 V |
| Average Forward Current | 150 mA |
| Package Type | MHD (Glass) |
The maximum reverse recovery time is 3.5 nanoseconds.
The maximum capacitance is 3.0 picofarads.
The package type is MHD (glass), which enables easy mounting and high reliability.