2SJ317 is a high voltage, high frequency, low on-resistance P type MOSFET. Suitable for camera or VTR motor drive circuit, power switch, solenoid drive etc.
This document is a technical datasheet for the Hitachi 2SJ317, a Silicon P-Channel MOS FET designed for high-speed power switching and low-voltage operation. It features very low on-resistance and is suitable for applications such as camera or VR motor drive circuits, power switches, and solenoid drives.
The datasheet provides comprehensive electrical specifications including absolute maximum ratings (e.g., Drain to source voltage of -12V), typical operating characteristics like turn-on/turn-off times, and capacitance values. It also includes graphical data for safe operation areas and switching time versus drain current.
| Drain to source voltage (Voss) | -12 V |
|---|---|
| Gate to source voltage (Vgs) | 7 V |
| Drain current (Id) | +2 A |
| Channel dissipation (Pch) | 1 W |
| Channel temperature (Teh) | 150 °C |
| Storage temperature (Tstg) | -55 to +150 °C |
It is suitable for camera or VR motor drive circuits, power switches, and solenoid drives.
The maximum channel temperature (Teh) is 150 °C.