1SS277 is an ADE silicon epitaxial planar diode for UHF/VHF tuner band switch. 1SS277 features low forward resistance (rf = 0.5Ω max) and ultra small glass package (UMD) for easy mounting and high reliability.
This datasheet details the electrical characteristics and absolute maximum ratings for the Hitachi 1SS277 silicon epitaxial planar diode, intended for use in UHF/VHF tuner band switching applications. It specifies parameters such as reverse voltage, forward current, and capacitance under test conditions. The diode is packaged in a small UMD glass package for easy mounting and high reliability.
The document includes graphical representations of forward and reverse current-voltage relationships, capacitance versus reverse voltage, and forward resistance versus frequency and current. Package dimensions and color-coded band information (cathode: verdure, 2nd band: blue) are also provided.
| Reverse Voltage | 35 V |
|---|---|
| Forward Current | 100 mA |
| Power Dissipation | 100 mW |
| Forward Resistance | 0.59 max Ω |
| Package Type | UMD |
The maximum reverse voltage is 35 V.
The forward resistance is 0.59 Ω maximum.
It comes in a UMD (Ultra Small Glass) package.