Hitachi 2SC1212/2SC1212A Silicon NPN Epitaxial Transistor Datasheet

2SC1212 and 2SC1212A are silicon NPN epitaxial transistors, used in low frequency power amplifiers.


Hitachi 2SC1212/2SC1212A Silicon NPN Epitaxial Transistor Datasheet - cover page
Brand
Hitachi
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
4
File format
PDF
File size
24 KB
Published
07 June, 2012
Updated
30 September, 2023
MD5 checksum
36165D765B2EF63DEB84FF5B37632785

About this manual

This document is a technical datasheet for the Hitachi 2SC1212 and 2SC1212A series of Silicon NPN Epitaxial Transistors. The devices are specifically designed for use as low frequency power amplifiers and feature a TO-91 package (implied by 'TOH126 MOD' context in similar Hitachi docs, though text only confirms the model).

What's inside

  • Application
  • Absolute Maximum Ratings
  • Electrical Characteristics
  • Collector Dissipation Curve
  • Typical Output Characteristic Curves
  • Typical Transfer Characteristics

Specifications

Package TypeTOH126 MOD
Junction Temperature (Max)150 C

Frequently asked questions

What is the primary application for these transistors?

The document states they are intended for low frequency power amplifier applications.

Are there any restrictions on medical use?

Yes, the products are not authorized for use in medical applications without written consent from Hitachi's sales company.

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