2SA1484 is a silicon PNP epitaxial low frequency amplifier with characteristics such as collector to base voltage, collector to emitter voltage, and emitter to base voltage.
This document is a technical datasheet for the Hitachi 2SA1484, which is a Silicon PNP Epitaxial transistor designed for use as a low frequency amplifier. The device features an NPN emitter, base, and collector structure.
The datasheet provides comprehensive electrical specifications including absolute maximum ratings such as a collector-to-base voltage of -90V and a collector power dissipation of 150mW. It also lists DC current transfer ratios ranging from 250 to 800 depending on the grade (D or E) and includes typical output characteristic curves.
| Device Type | Silicon PNP Epitaxial |
|---|---|
| Application | Low frequency amplifier |
| Collector to base voltage (Vocb) | -90 V |
| Collector power dissipation (Pc) | 150 mW |
| Junction temperature (Tj) | 150 °C |
| DC current transfer ratio (hFE) Min | 250 |
The document states that this component is intended for use in low frequency amplifiers.
At an ambient temperature of 25°C, the maximum collector current is rated at -100 mA.