1SS108 is a silicon Schottky barrier diode for various detectors and high speed switching. The diode has a very good detection efficiency, a small temperature coefficient and a high reliability with glass seal.
This datasheet provides electrical specifications for the Hitachi 1SS108 silicon Schottky barrier diode, including absolute maximum ratings and electrical characteristics at 25°C. It features graphs showing forward current vs. voltage, reverse current vs. voltage, capacitance vs. reverse voltage, and rectifier efficiency vs. input voltage. The diode is packaged in a DO-35 (SC-48) case with a weight of 0.13g, suitable for high-speed switching and detector applications.
| Reverse Voltage | 30 V |
|---|---|
| Average Rectified Current | 15 mA |
| Junction Temperature | 125 °C |
| Storage Temperature | -55 to +125 °C |
| Forward Current at 1V | 3.0 mA |
| Reverse Current at 10V | 100 µA |
| Capacitance at 1V, 1MHz | 3.0 pF |
| Rectifier Efficiency | 70 % |
| ESD-Capability | 70 V |
| Package Code | DO-35 (SC-48) |
| Weight | 0.13 g |
The maximum reverse voltage is 30 V.
The forward current at 1V is 3.0 mA.
The capacitance is 3.0 pF.
The package code is DO-35 (SC-48).