The document describes the absolute maximum ratings and electrical characteristics of 2SC1212 and 2SC1212A. These are silicon NPN epitaxial low-frequency power amplifier devices suitable for low-frequency power amplifier applications. They have higher collector-to-base and collector-to-emitter voltage ratings, lower emitter-to-base voltage rating, maximum collector current of 1A, and maximum collector power dissipation of 8W. In terms of electrical characteristics, the devices have higher collector-to-base and collector-to-emitter breakdown voltages, lower collector cutoff current, higher DC current transfer ratio, moderate base-to-emitter voltage and collector-to-emitter saturation voltage, and higher gain bandwidth product. Additionally, the document provides grouping information for the devices.
This document is a technical datasheet for the Hitachi 2SC1212 and 2SC1212A series of Silicon NPN Epitaxial transistors. The devices are specifically designed for use in low frequency power amplifiers.
The datasheet provides absolute maximum ratings, electrical characteristics including DC current transfer ratio and gain bandwidth product, and typical output characteristic curves. It also includes application notes regarding medical usage restrictions.
| Device Type | Silicon NPN Epitaxial |
|---|---|
| Application | Low frequency power amplifier |
| Collector to base voltage (Vcbo) | 50 V / 80 V |
| Collector current (Ic) | 1 A |
| Collector power dissipation (Pc) | 0.75 W |
| Junction temperature (Tj) | 150 °C |
| DC current transfer ratio (hFE) Min | 60 |
| Gain bandwidth product (fT) | 160 MHz |
The document states they are intended for low frequency power amplifier applications.
No, Hitachi's products are not authorized for use in medical applications without written consent from the appropriate officer of their sales company.