1SS199 Silicon Schottky Barrier Diode is suitable for various detectors and high-speed switching applications. It has excellent detection efficiency and a small temperature coefficient. The small glass package (MHD) allows for easy mounting and ensures high reliability.
This datasheet provides electrical specifications for the Hitachi 1SS199 silicon Schottky barrier diode, including forward and reverse current ratings, capacitance, and rectifier efficiency. The device is packaged in a small glass MHD case for easy mounting and high reliability. It is suitable for high-speed switching and detector applications. Package dimensions and weight are also specified for design integration.
| Reverse Voltage | 30 V |
|---|---|
| Average Rectified Current | 15 mA |
| Junction Temperature | 125 °C |
| Forward Current at 1V | 3.0 mA |
| Reverse Current at 10V | 100 µA |
| Capacitance at 1V | 3.0 pF |
| Rectifier Efficiency | 70 % |
| ESD Capability | 70 V |
| Package Code | MHD |
| Weight | 0.084 g |
The maximum reverse voltage is 30 V.
The forward current at 1V is 3.0 mA.
The rectifier efficiency is 70% at 2Vrms input, 40MHz frequency, and 5kΩ load.
The package type is MHD (glass package).