1SS120 is a Si Epitaxial Planar Diode for High Speed Switching, features low capacitance (C = 3.0pF max) and short reverse recovery time (trr = 3.5ns max).
This datasheet details the Hitachi 1SS120 silicon epitaxial planar diode, designed for high-speed switching applications. It highlights key electrical characteristics such as a maximum capacitance of 3.0pF and a reverse recovery time of 3.5ns. The diode is packaged in a small glass MHD package for easy mounting and reliability. Absolute maximum ratings include a peak reverse voltage of 70V and a junction temperature of 175°C. Electrical characteristics are provided at 25°C, including forward voltage, reverse current, and capacitance vs. voltage curves.
| Capacitance | 3.0 pF max |
|---|---|
| Reverse Recovery Time | 3.5 ns max |
| Peak Reverse Voltage | 70 V |
| Peak Forward Current | 450 mA |
| Average Forward Current | 150 mA |
| Power Dissipation | 250 mW |
| Junction Temperature | 175 °C |
| Package | MHD |
The reverse recovery time is 3.5 ns maximum.
The maximum capacitance is 3.0 pF.
The peak reverse voltage rating is 70 V.
The diode is packaged in a small glass MHD package.