1SS118 is a silicon planar diode produced by Texas Instruments. It features high average forward current and high reliability.
This datasheet provides technical specifications for the Hitachi 1SS118 silicon epitaxial planar diode, designed for high-speed switching applications. It includes absolute maximum ratings such as peak reverse voltage (75 V) and average forward current (200 mA). Electrical characteristics like forward voltage, reverse current, and capacitance are listed with test conditions. The document also includes graphs showing forward and reverse voltage-current relationships and capacitance versus reverse voltage. Package dimensions and marking details for the DO-35 package are provided for assembly reference.
| Peak Reverse Voltage | 75 V |
|---|---|
| Average Forward Current | 200 mA |
| Reverse Recovery Time | 3.0 ns |
| Capacitance at 1 MHz | 3.5 pF |
The peak reverse voltage is 75 V.
The average forward current is 200 mA.
The reverse recovery time is 3.0 ns.
The capacitance is 3.5 pF at 1 MHz.