1SS286 is a silicon Schottky barrier diode for various detectors, high speed switching. It has very low reverse current, very good detection efficiency, and small glass package (MHD) for easy mounting and high reliability.
This datasheet details the Hitachi 1SS286 silicon Schottky barrier diode, designed for high-speed switching and detector applications. It includes absolute maximum ratings such as reverse voltage (25V), forward current (35mA), and junction temperature (100°C). The diode is packaged in a small glass MHD case for easy mounting and reliability. Electrical characteristics like forward voltage (0.6V at 10mA), reverse current (10nA at 10V), and capacitance (1.2pF at 1MHz) are specified. Package dimensions and weight are provided for design integration.
| Reverse Voltage | 25 V |
|---|---|
| Forward Current | 35 mA |
| Power Dissipation | 150 mW |
| Junction Temperature | 100°C |
| Forward Voltage | 0.6 V |
| Reverse Current | 10 nA |
| Capacitance | 1.2 pF |
| Package Code | MHD |
| Weight | 0.084 g |
The maximum reverse voltage is 25 V.
The forward voltage is 0.6 V at 10mA.
The reverse current is 10 nA at 10V reverse voltage.
The capacitance is 1.2 pF at 1MHz frequency.