This document describes the features and characteristics of the FDA15N65 650V N-Channel MOSFET from the UniFET TM series, including 16A current, 650V voltage, 0.44Ω on-state resistance, low gate charge, and fast switching speed.
This document provides design specifications and electrical characteristics for the FDA15N65, an N-channel MOSFET produced using Fairchild's proprietary planar stripe DMOS technology. The device is designed to minimize on-state resistance while providing superior switching performance and high energy pulse withstand capability in avalanche mode.
| Drain-Source Voltage | 650 V |
|---|---|
| Continuous Drain Current (Tg = 25°C) | 16 A |
| Power Dissipation (Te = 25°C) | 260 W |