SupreMOS TM FCP7N60N/FCPF7N60NT N-Channel MOSFET is a high voltage super-junction MOSFET from Fairchild Semiconductor Corporation. It employs a deep trench filling process and has a typical RDS(on) of 0.46 ohms and a typical Qg of 17.8 nF. It is RoHS compliant.
This document is a datasheet for the Fairchild Semiconductor SupreMOS™ FCP7N60N and FCPF7N60NT N-Channel MOSFETs. These devices utilize a deep trench filling process to provide superior switching performance and ruggedness, specifically designed for AC-DC SMPS requirements in PFC, server/telecom power, and industrial power applications.
| Package Type | TO-220AB / TO-220F |
|---|
Yes, the datasheet explicitly states that the device is RoHS Compliant.
The device supports a maximum continuous drain current of 6.8 A when the case temperature is 25°C.
The device operates and stores within a temperature range of -55 to +150 °C.
The maximum rated voltage between the drain and source is 600 V.