The FCP380N60E / FCPF380N60E is a 600V N-channel MOSFET from Fairchild Semiconductor Corporation with a maximum rating of 600V and a maximum on-resistance of 380mΩ. It has ultra-low gate charge and low effective output capacitance.
This document is a technical datasheet for the FCP380N60E and FCPF380N60E N-Channel MOSFETs manufactured by Fairchild Semiconductor. These devices utilize the proprietary SuperFET II technology, designed to minimize conduction loss and provide superior switching performance for AC/DC power conversion applications.
The datasheet provides comprehensive electrical characteristics, including maximum ratings such as a 650V breakdown voltage and 380mΩ on-resistance. It details dynamic parameters like gate charge and capacitance, along with thermal resistance values and safe operating area graphs.
| Drain to Source Voltage (Vdss) | 600 V |
|---|---|
| Gate to Source Voltage (Vgs) | -20C +20 v |
| Continuous Drain Current (Te = 25°C) | 10.2 A |
| Single Pulsed Avalanche Energy | 211.6 mJ |
| Power Dissipation (To = 25°C) | 106 W |
| Operating and Storage Temperature Range | -55 to +150 °C |
| Thermal Resistance, Junction to Case (RθJC) | 1.18 °C/W |
The device supports a maximum continuous drain current of 10.2 A when the temperature is 25°C.
The operating and storage temperature range extends from -55 to +150 °C.