This document describes the features and characteristics of FCPF400N60 N-Channel MOSFET, including maximum drain current, thermal characteristics, maximum operating temperature range, etc.
This document is a datasheet for the Fairchild Semiconductor FCPF400N60, a 600V N-channel MOSFET utilizing the proprietary SuperFET II technology. The device features a maximum on-resistance of 400mΩ and is designed for AC/DC power conversion applications requiring high efficiency and robust performance against dv/dt and avalanche energy. This manual is written in Chinese.
| Drain to Source Voltage | 600 V |
|---|---|
| Gate to Source Voltage-DC | ±20V |
| Drain Current-Continuous (TC = 25°C) | 10 A |
| Maximum On-Resistance | 400mΩ |
| Total Gate Charge at 10V | Typ. 28 nC |
| Effective Output Capacitance | Typ. 90 pF |
| Operating and Storage Temperature Range | -55 to +150°C |
| Thermal Resistance, Junction to Case | 4 °C/W |
The maximum continuous drain current is 10 A when the case temperature is 25°C.
The maximum drain to source voltage rating is 600 V.
The maximum junction temperature for operation is 150°C.