FCP9N60N / FCPF9N60NT N-Channel MOSFET is a high voltage super-junction MOSFET from Fairchild Semiconductor Corporation, employing a deep trench filling process that differentiates it from preceding multi-epi based technologies. It provides world class Rsp, superior switching performance and ruggedness.
This document is a datasheet for the Fairchild SupreMOS FCP9N60N and FCPF9N60NT N-Channel MOSFETs. These devices utilize a deep trench filling process to provide superior switching performance and ruggedness for AC-DC SMPS requirements, including PFC, server/telecom power, and industrial applications.
The datasheet provides comprehensive electrical characteristics, including maximum ratings, off and on characteristics, dynamic parameters, and switching characteristics. It also includes typical performance characteristics graphs, test circuit diagrams, and mechanical dimensions for both the TO-220 and TO-220F packages.
| Package Type | TO-220 / TO-220F |
|---|
Yes, the datasheet states that the device is RoHS compliant.
The single pulsed avalanche energy is 135 mJ.