FDC3535 is a P-Channel MOSFET produced by Fairchild with extremely low rDS(on), high power and current handling capability, and is widely used in load switch and synchronous rectifier applications.
This document is a technical datasheet for the Fairchild Semiconductor FDC3535, a P-Channel Power Trench MOSFET designed with advanced technology for low on-resistance and high switching performance. The device features a maximum drain-to-source voltage of -80V and continuous current capability of -2.1A.
| Drain to Source Voltage (Vds) | -80 V |
|---|---|
| Continuous Drain Current (Id) | -2.1 A |
| On-Resistance (Rds(on)) | 183 mQ |
The device supports a maximum continuous drain current of -2.1 A.
The device operates and stores within a range from -55 to +150 °C.