Fairchild Semiconductor FDC2612 200V N-Channel PowerTrench MOSFET Datasheet

The document is the datasheet of FDC2612.


Fairchild Semiconductor FDC2612 200V N-Channel PowerTrench MOSFET Datasheet - cover page
Brand
Fairchild
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
5
File format
PDF
File size
202 KB
Published
11 July, 2012
Updated
30 September, 2023
MD5 checksum
2209653EEEE085B089C1A2A3B81FBB5B

About this manual

The FDC2612 is a 200V N-Channel MOSFET designed specifically to improve the efficiency of DC/DC converters using synchronous or conventional switching PWM controllers. It features low gate charge, low on-resistance, and fast switching speed.

What's inside

  • General Description
  • Applications
  • Features
  • Absolute Maximum Ratings
  • Thermal Characteristics
  • Electrical Characteristics
  • Typical Characteristics
  • Package Marking and Ordering Information
  • Trademarks
  • Disclaimer

Specifications

Drain-Source Voltage200 V
Operating Junction Temperature-55 to +150 °C
Gate Charge (Typical)8 nC
On-Resistance (Typical)725 mΩ

Frequently asked questions

What is the primary application of the FDC2612?

It is designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

What is the maximum continuous drain current?

The maximum continuous drain current is 1.1 A.

What is the typical gate charge?

The typical gate charge is 8 nC.

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