The FDC3612 is a 100V N-Channel PowerTrench MOSFET optimized for low gate charge, low RDS(ON) and fast switching speed, suitable for DC/DC converters.
This document is a technical datasheet for the Fairchild Semiconductor FDC3612, an N-Channel PowerTrench MOSFET. The device is specifically optimized to improve efficiency in DC/DC converters using synchronous or conventional switching PWM controllers.
Key features highlighted include low gate charge (typical 14nC), high power and current handling capability, and fast switching speed. The datasheet provides absolute maximum ratings, electrical characteristics such as on-resistance and capacitance values, and typical performance graphs.
| Drain-Source Voltage | 100 V |
|---|---|
| Continuous Drain Current | 2.6 A |
| Maximum Power Dissipation | 1.6 W |
| Operating Junction Temperature Range | -55 to +150 °C |
The FDC3612 is an N-Channel MOSFET designed specifically to improve the overall efficiency of DC/DC converters.
The device supports a continuous drain current of 2.6 A and a pulsed drain current of 20 A.
The maximum power dissipation is 0.8 W when mounted on a minimum pad.