This document describes the features and characteristics of the FDB8896 N-Channel PowerTrench® MOSFET. The product is specifically designed to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON), and fast switching speed.
This document is a datasheet for the Fairchild Semiconductor FDB8896, an N-Channel PowerTrench MOSFET designed to improve the efficiency of DC/DC converters. The device features a 30V drain-to-source voltage rating and a continuous drain current of 93A at 25°C. It is optimized for low gate charge and fast switching speeds.
| Drain to Source Voltage | 30 V |
|---|---|
| Continuous Drain Current (Tg = 25°C, Vgg = 10V) | 93 A |
| Power dissipation | 80 W |
| Operating and Storage Temperature | -55 to 175 °C |
| Thermal Resistance Junction to Case | 1.88 °C/W |
| Package Type | TO-263AB |
The maximum continuous drain current is 93 A under these conditions.
The maximum rated junction temperature is 175°C.
It is designed specifically to improve the overall efficiency of DC/DC converters.